PART |
Description |
Maker |
MS-MK92-02XA5 MS-MK92-03XA5 MS-MK92-04XA5 MS-MK94- |
FEP, high and low temperature and chemical agents resistant
|
SHIELD s.r.l.
|
MPXHZ6250AC6T1 MPXHZ6250A |
Media Resistant and High Temperature Accuracy Integrated Silicon Pressure Sensor
|
FREESCALE[Freescale Semiconductor, Inc]
|
MPXHZ6400AC6T1 MPXHZ6400A |
Media Resistant and High Temperature Accuracy Intergrated Silicon Pressure Sensor
|
Freescale (Motorola) FREESCALE[Freescale Semiconductor, Inc]
|
MPXHZ6116A MPXHZ6116A6T1 MPXHZ6116A6U |
Media Resistant Integrated Silicon Pressure Sensor for Measuring Absolute Pressure, On-Chip Signal Conditioned, Temperature Compensated and Calibrated
|
Freescale Semiconductor, Inc
|
FSJ163R4 FSJ163D FSJ163D1 FSJ163D3 FSJ163R FSJ163R |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 44A/ 200V/ 0.050 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs 70A/ 100V/ 0.022 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
MCO-2S25 MCO-2S3 |
SMD Clock Oscillator HCMOS / TTL High shock and vibration resistant
|
QUARTZCOM the communications company
|
FSPYC260D1 FSPYC260F FSPYC260F4 FN4850 FSPYC260R4 |
From old datasheet system Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐N沟道MOS场效应管) 抗辐射,抗SEGR N沟道功率MOSFET(抗辐射沟道马鞍山场效应管) Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 58 A, 200 V, 0.031 ohm, N-CHANNEL, Si, POWER, MOSFET
|
INTERSIL[Intersil Corporation] Intersil, Corp.
|
FSYC260R4 FSYC260D FSYC260D1 FSYC260D3 FSYC260R FS |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 46 A, 200 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 抗辐射,抗SEGR N沟道功率MOSFET
|
INTERSIL[Intersil Corporation] Intersil, Corp.
|
FSYA254R4 FSYA254D FSYA254D1 FSYA254D3 FSYA254R FS |
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 21 A, 250 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 抗辐射,抗SEGR N沟道功率MOSFET Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation] Intersil, Corp.
|